algaas/gaas t-1 3/4 package infrared emitting diode mie-554A4 description package dimensions the mie-554A4 is an infrared emitting diode utilizing gaas with algaas window coating chip technology. it is molded in water clear plastic package. features l high radiant power and high radiant intesity l suitable for dc and high pulse current operation l standard t-1 3/4 ( f 5mm) package l peak wavelength l p =940 nm l good spectral matching to si-photodetecto l radiant angle : 50 absolute maximum ratings parameter maximum rating unit power dissipation 120 mw peak forward current(300pps,10 m s pulse) 1 a continuos forward current 100 ma reverse voltage 5 v operating temperature range -55 o c to +100 o c storage temperature range -55 o c to +100 o c lead soldering temperature 260 o c for 5 seconds 11/17/2000 @ t a =25 o c unity opto technology co., ltd. unit:mm( inch) a c notes : 1. tolerance is 0.25 mm (.010") unless otherwise noted. 2. protruded resin under flange is 1.5 mm (.059") max. 3. lead spacing is measured where the leads emerge from the package. 1.0 (.040) 2.54nom. (.100) see note 2 see note 3 7.62 (.300) 0.5 typ. (.020) 23.4 min. (.920) 1.0min. (.040) f 5.05 (.200) flat denotes cathode 5.90 (.230) 5.47 (.215)
mie-554A4 optical-electrical characteristics @ t a =25 o c parameter test conditions symbol min. typ . max. unit radiant intensity i f =20ma ie 0.5 1.5 mw/sr forward voltage i f =50ma v f 1.30 1.50 v reverse current v r =5v i r 100 m a peak wavelength i f =20ma l p 940 nm spectral bandwidth i f =20ma dl 50 nm view angle i f =20ma 2 q 1/2 50 deg . typical optical-electrical characteristic curves 11/17/2000 fig.6 radiation diagram 0.5 0.3 0.1 0.2 0.4 0.6 1.0 0.9 0.8 relative radiant intensity 0 10 20 0 1 2 3 4 5 0 20 40 60 80 100 forward current (ma) fig.4relative radiant intensity vs. forward current output power relative to value at i f =20ma 0 20 40 60 80 100 0 1.2 1.6 2.0 2.4 2.8 forward voltage (v) fig.3 forward current vs. forward voltage forward current (ma) 0 0.5 1 1.5 2 2.5 3 -40 -20 0 20 40 60 ambient temperature t a ( o c ) fig.4 relative radiant intensity vs. ambient temperature output power to value i =20ma 30 90 70 60 50 80 40 0 0.5 1 840 940 1040 wavelength (nm) fig.1 spectral distribution relative radiant intensity 0 10 20 30 40 50 60 -55 -25 0 25 50 75 100 125 ambient temperature t a ( o c ) fig.2 forward current vs. ambient temperature forward current i f (ma)
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